Journal Papers

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  A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P

  P. P. Altermatt, A. Schenk, G. Heiser

  J. Appl. Phys. 100, 1113714 (2006)

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  A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

  P. P. Altermatt, A. Schenk, B. Schmitthüsen, G. Heiser

  J. Appl. Phys. 100, 1113715 (2006)

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  Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers

  A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, G. Strasser

  Materials Science and Engineering B 147, 152 (2008)

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  Theory of the electronic structure of GaN/AlN hexagonal quantum dots

  A. D. Andreev, E. P. O’Reilly

  Phys. Rev. B 62, 15851 (2000)

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  Electron and hole mobilities in silicon as a function of concentration and temperature

  N.D. Arora, J.R. Hauser, D.J. Roulston

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  Eight-band kp model of strained zinc blende crystals

  Thomas B. Bahder

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  Quantum cascade lasers that emit more light than heat

  Y. Bai, S. Slivken, S. Kuboya, S. R. Darvish, M. Razeghi

  Nature Photonics 4, 99-102 (2010)

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  Exciton binding energy in quantum wells

  G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki

  Physical Review B 26, 1974 (1982)

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  A Macintosh Hypercard stack for calculation of thermodynamically-corrected buffer recipes

  R. J. Beynon

  Comput. Appl. Biosci. 4 (4), 487 (1988)

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  Simulation of quantum cascade lasers - optimizing laser performance

  S. Birner, T. Kubis, and P. Vogl

  Photonik international 2, 60 (2008)

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  Simulation zur Optimierung von Quantenkaskadenlasern

  S. Birner, T. Kubis, and P. Vogl

  Photonik 1, 44 (2008)

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  Modeling of Semiconductor Nanostructures with nextnano3

  S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl

  Acta Physica Polonica A 110 (2), 111 (2006)

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  Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction

  S. Birner, C. Schindler, P. Greck, M. Sabathil, and P. Vogl

  Journal of Computational Electronics 8, 267–286 (2009)

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  A parallel global multiobjective framework for optimization: pagmo

  F. Biscani, D. Izzo

  Journal of Open Source Software 5 (53), 2338 (2020)

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  Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors

  V. A. Belyakov, V. A. Burdov

  J. Phys. Condens. Matter 20, 025213 (2008)

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  Electron and hole spectra of silicon quantum dots

  V. A. Burdov

  JETP 94, 411 (2002)

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  Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature

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  Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

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  Energy-band structure of Germanium and Silicon: The k.p method

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  Microscopic theory of nanostructured semiconductor devices: beyond the envelope=function approximation

  A. D. Carlo

  Semiconductor Science and Technology 18 (1), R1-31

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  Carrier mobilities in silicon empirically related to doping and field

  D. Caughey, R. Thomas

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  Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental dataset approach

  E. Chatzikyriakou, J. Wang, L. Mazzella, A. Lacerda-Santos, M. C. da S. Figueira, A. Trellakis, S. Birner, T. Grange, C. Bäuerle, and X. Waintal

  Phys. Rev. Research 4, 043163, December (2022)

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  An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide

  J. Chilleri, Y. Wang, M. S. Shur, and S. K. O’Leary

  Solid State Communications 330, 114240, (2021)

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  k.p method for strained wurtizte semiconductors

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  Physical Review B 54 (4), 2491, January (1996)

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  Optical gain of strained wurtzite GaN quantum-well lasers

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  IEEE Journal of Quantum Electronics 32, no. 10, pp. 1791-1800, October (1996)

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  An Improved Electron and Hole Mobility Model for General Purpose Device Simulation

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  IEEE Transactions on Electron Devices 44, 1529 (1997)

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  Nanoscale device modeling: the Green’s function method

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  Superlattices and Microstructures 28, 253 (2000)

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  Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

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  Science 290, 2277 (2000)

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  Theoretical estimation of tunnel currents in hetero-junctions: The special case of nitride tunnel junctions

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  J. Appl. Phys. 126, 174501 (2019)

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  Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling

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  Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Ternaries

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  IEEE Trans. Electron Dev. 48 (3), 535 (2001)

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  Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling

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  Optics Express 20, 3866 (2012)

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  Brazilian Journal of Physics 36, 438 (2006)

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  Six-band k”p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

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  Physical Review B 59 (15), 9691 (1999)

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  Applied Physics Letters 86, 161114 (2005)

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  Efficient Method for the Calculation of Dissipative Quantum Transport in Quantum Cascade Lasers

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  Optics Express 23, 6587–6600 (2015)

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  The nonequilibrium Green’s functions method and descendants: ways to avoid and to go

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  Abstracts of 14^th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 145 (2010)

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  Semiconductor Science and Technology 20, S228 (2005)

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  Dimensionally constrained D’yakonov-Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D

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  Modeling techniques for quantum cascade lasers

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  Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

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• [KnoetigLaserPhotRev2022]

  Mitigating valence intersubband absorption in interband cascade lasers

  H. Knoetig, J. Nauschuetz, N. Opacak, S. Hoefling, J. Koeth, R. Weih, B. Schwarz

  Laser & Photonics Reviews 16, 2200156 (2022)

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  Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations

  I. Kriekouki, F. Beaudoin, P. Philippopoulos, C. Zhou, J. Camirand-Lemyre, S. Rochette, S. Mir, M.J. Barragan, M- Pioro-Ladriere, P. Galy

  Solid-State Electronics 194 (1), 108355 (2022)

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  Self-consistent quantum transport theory of carrier capture in heterostructures

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  Proceedings of the 14^th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, Vol. 110, 369–372 (2005)

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  Coherence of resonant-tunneling transport in terahertz quantum-cascade lasers

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  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

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  Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

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  The Interband Cascade Laser

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  High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

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  Nanomaterials 11, 1125 (2021)