Transistors

Schrödinger-Poisson - A comparison to the tutorial file of Greg Snider's code (AlGaAs/GaAs HEMT)

• Heterostructure, doping, 2DEG, AlGaAs/GaAs, user-defined function for the doping profile
• Self-consistent Schrödinger-Poisson equation

InGaAs/AlInAs HEMT structure (High Electron Mobility Transistor)

• Heterostructure, doping, 2DEG, InGaAs/AlInAs
• Strain equation, self-consistent Schrödinger-Poisson equation

AlGaAs/GaAs inverted HEMT structure (High Electron Mobility Transistor)

• heterostructure, doping, 2DEG, AlGaAs/GaAs, variables in input file
• self-consistent Schrödinger-Poisson equation

Two-dimensional electron gas in an AlGaN/GaN field effect transistor (FET)

• Wurtzite, strain, piezoelectricity, pyroelectricity, electron energy levels and wave functions, 2DEG, variables in input file
• Strain equation, self-consistent Schrödinger-Poisson equation

DGMOS Structure 1 - Double Gate MOSFET (2D)
(Metal Oxide Semiconductor Field Effect Transistor)
DGMOS Structure 2 - Double Gate MOSFET (2D)
(including quantum mechanics)

• 2D and 3D simulations, drift-diffusion, mobility models
• self-consistent Current-Poisson equation in 2D and 3D

Capacitance-Voltage curve of a “metal”-insulator-semiconductor (MIS) structure

• apply a bias
• self-consistent Schrödinger-Poisson equation

Electron wave functions of a 2D slice of a Triple Gate MOSFET

Doped semiconductors - Charge carrier concentration as a function of temperature in Si, Ge, GaAs

p-Si / SiO₂ / poly-Si structure (MOSFET with inversion channel due to applied gate voltage)

k_|| dispersion of holes in unstrained and strained silicon inversion layers

n-i-n Si resistor (1D)
I-V curve of an n-doped Si structure (2D)

Electrolyte Gate AlGaN/GaN Field Effect Transistor as pH Sensor
Si-SiO₂ electrolyte sensor

Detection of proteins with a SOI (silicon-on-insulator) electrolyte sensor